Growth of strained GaAs1 ySby layers using metalorganic vapor phase epitaxy
نویسندگان
چکیده
The growth of pseudomorphically strained GaAs1 ySby layers with high Sb-mole fractions of yX0.35 are desired on GaAs substrates for making lasers and detectors in the mid-infrared range. The effect of gas-phase precursor chemistry on the strained-layer Sbincorporation efficiency in metalorganic vapor phase epitaxy (MOVPE) was determined using four combinations of ethyland methylGa and Sb precursors. The Sb-mole fractions in the strained GaAs1 ySby layers were found to be lower than those in relaxed films due to the strain-induced ‘lattice-latching’ effects. The Sb-mole fraction in the strained GaAs1 ySby layers decreased with the increasing AsH3/ Ga ratio for all the precursor chemistries. Higher Sb-incorporation efficiencies were observed for the ethyl-Ga chemistries. The experimental results were discussed in terms of lattice-latching effects, Sb-segregation phenomena and different decomposition kinetics for various precursor chemistries. r 2006 Elsevier B.V. All rights reserved. PACS: 61.10.Nz; 61.82.Fk; 68.65.Cd; 78.55.Cr; 82.33.Ya; 81.15.Gh
منابع مشابه
Effects of Ga- and Sb-precursor chemistry on the alloy composition in pseudomorphically strained GaAs1 ySby films grown via metalorganic vapor phase epitaxy
GaAs-based multiple quantum well (MQW) heterostructures comprised of metastable alloys such as GaAs1 ySby-GaAs1 zNz have potential for realizing high-performance and low temperature-sensitivity lasers in the 1.55 mm wavelength region. However, straininduced ‘lattice-latching’ and Sb-surface segregation effects limit the Sb-mole fractions in the pseudomorphically strained GaAs1 ySby layers to yp...
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